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Structure Characterization of (Al,Ga)N Epitaxial Layers by Means of X‐Ray Diffractometry
Author(s) -
Kozłowski J.,
Paszkiewicz R.,
Tłaczała M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<415::aid-pssb415>3.0.co;2-u
Subject(s) - diffractometer , materials science , crystallite , epitaxy , tilt (camera) , crystallography , x ray , sapphire , substructure , optics , crystal structure , geometry , chemistry , laser , physics , composite material , layer (electronics) , mathematics , structural engineering , engineering
The structural properties of (Al,Ga)N epitaxial layers were studied basing on X‐ray diffractometric measurements. The examined layers were deposited by MOVPE on c ‐plane sapphire substrate. The measurements were performed on MRD‐Philips diffractometer. Particularly, the density of lateral correlation length (coherence length) distribution, the most probable shape of the (Al,Ga)N/GaN blocks and twist as well as tilt mosaicities were described. The distribution of the crystallite block sizes was calculated from X‐ray peak profile analysis. Twist and tilt mosaicities were examined using rocking curve mode and specially chosen configuration, where an edge of the sample was illuminated.