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Threading Dislocations and Optical Properties of GaN and GaInN
Author(s) -
Miyajima T.,
Hino T.,
Tomiya S.,
Yanashima K.,
Nakajima H.,
Nanishi Y.,
Satake A.,
Masumoto Y.,
Akimoto K.,
Kobayashi T.,
Ikeda M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<395::aid-pssb395>3.0.co;2-2
Subject(s) - cathodoluminescence , materials science , epitaxy , optoelectronics , enhanced data rates for gsm evolution , dislocation , condensed matter physics , nanotechnology , composite material , luminescence , layer (electronics) , physics , telecommunications , computer science
We categorized threading dislocations in GaN and GaInN multiple quantum wells and epitaxially lateral overgrown GaN into three types of line defects (edge, screw and mixed dislocations), and investigated the optical properties. It was confirmed by cathodoluminescence measurements that not only screw and mixed dislocations but also edge dislocations act as non‐radiative centers in GaN. Epitaxial lateral overgrowth (ELO) technique can reduce the densities of all line‐defects in a several μm wide wing region. Growth steps in the wing region were disturbed by the defects which were left in a seed region, and a complicated structure was formed at the surface of GaN and GaInN layers grown on ELO‐GaN at low temperature. We believe that this surface structure formed by high supersaturation is a cause of In compositional spatial fluctuation and phase separation of GaInN alloy.