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Low‐Temperature Activation of Mg‐Doped GaN with Pd Thin Films
Author(s) -
Waki I.,
Fujioka H.,
Oshima M.,
Miki H.,
Okuyama M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<391::aid-pssb391>3.0.co;2-i
Subject(s) - metalorganic vapour phase epitaxy , doping , annealing (glass) , materials science , thin film , chemical vapor deposition , desorption , analytical chemistry (journal) , hydrogen , thermal desorption , optoelectronics , layer (electronics) , chemistry , epitaxy , nanotechnology , adsorption , composite material , organic chemistry , chromatography
The activation of metalorganic chemical vapor deposition (MOCVD)‐grown Mg‐doped GaN by N 2 annealing with thin Pd films has been investigated. p‐type GaN with a hole concentration of 7 × 10 16 cm —3 has been obtained at an annealing temperature as low as 200 °C using this technique. Thermal desorption spectroscopy (TDS) measurements have revealed that hydrogen is effectively removed from the Mg‐doped GaN layer by the use of the Pd film.