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Analysis of Time‐Resolved Donor–Acceptor‐Pair Recombination in MBE and MOVPE Grown GaN : Mg
Author(s) -
Strauf S.,
Ulrich S.M.,
Michler P.,
Gutowski J.,
Böttcher T.,
Figge S.,
Einfeldt S.,
Hommel D.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<379::aid-pssb379>3.0.co;2-v
Subject(s) - acceptor , recombination , metalorganic vapour phase epitaxy , impurity , excited state , exciton , excitation , doping , binding energy , atomic physics , materials science , chemistry , analytical chemistry (journal) , molecular physics , optoelectronics , physics , condensed matter physics , nanotechnology , epitaxy , biochemistry , organic chemistry , layer (electronics) , quantum mechanics , chromatography , gene
We have investigated the dynamics of the donor–acceptor‐pair (DAP) recombination in Mg‐doped GaN layers grown by MOVPE as well as MBE. The observed nonexponential decay curves are perfectly described if all parallel decay channels for each donor impurity surrounded by the acceptor impurities are included. Best fits have been obtained with a donor binding energy of 32 ± 2 meV. Additionally, under resonant excitation of the donor‐bound‐exciton complex the excited state of the donor could be clearly identified. From these data a donor binding energy of 29.9 ± 1.0 meV has been estimated, in good agreement with the value obtained from the DAP decay. We emphasize that the analysis of the DAP decay yields an accurate estimate for the neutral acceptor concentration in GaN : Mg without any need for further electrical measurements.