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Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation
Author(s) -
Kim DongJoon,
Kim HyunMin,
Han MyungGeun,
Moon YongTae,
Lee Seonghoon,
Park SeongJu
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<375::aid-pssb375>3.0.co;2-a
Subject(s) - excimer laser , irradiation , materials science , excimer , laser , acceptor , chemical vapor deposition , doping , optoelectronics , analytical chemistry (journal) , annealing (glass) , photochemistry , chemistry , optics , physics , chromatography , nuclear physics , composite material , condensed matter physics
We report on the activation of Mg acceptors in Mg‐doped GaN films, grown by metalorganic chemical vapor deposition, via the use of a pulsed KrF (248 nm) excimer laser irradiation. The as‐grown GaN : Mg, which was irradiated by the KrF excimer laser at a laser energy density of 590 mJ/cm 2 in a N 2 ambient showed a hole concentration of 4.42 × 10 17 cm —3 . Furthermore the hole concentration in GaN : Mg, which was activated by a conventional rapid thermal annealing, was increased from 4.3 × 10 17 to 9.42 × 10 17 cm —3 as the result of subsequent laser irradiation. These results suggest that a pulsed KrF excimer laser irradiation can dramatically enhance the p‐type conductivity of GaN : Mg by efficiently dissociating the Mg–H complexes.