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Time‐ and Temperature‐Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE
Author(s) -
Gurskii A.L.,
Marko I.P.,
Lutsenko E.V.,
Pavlovskii V.N.,
Zubialevich V.Z.,
Yablonskii G.P.,
Schineller B.,
Schön O.,
Heuken M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<361::aid-pssb361>3.0.co;2-u
Subject(s) - photoluminescence , metalorganic vapour phase epitaxy , acceptor , materials science , ionization , epitaxy , ionization energy , blueshift , spectral line , analytical chemistry (journal) , optoelectronics , doping , luminescence , photoluminescence excitation , atomic physics , chemistry , condensed matter physics , nanotechnology , ion , physics , organic chemistry , layer (electronics) , astronomy , chromatography
Time‐integrated and time‐resolved photoluminescence (PL) spectra as well as the luminescence transients of moderately doped GaN:Mg samples grown by MOVPE were studied between 80 K and 380 K at pulse excitation by a nitrogen laser beam in order to clarify the mechanism of the large blue shift of the 2.8 eV PL band above room temperature. Based on the performed study, the new band at 3.05 eV dominating in PL spectra above room temperature is attributed to the donor‐to‐valence band recombination. The corresponding donor ionization energy is about 290 meV. The blue shift of the spectra is therefore explained as a result of ionization of shallow acceptor states involved together with deep donors in donor–acceptor recombination forming the 2.8 eV band below room temperature.