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Observation of Mg‐Rich Precipitates in the p‐Type Doping of GaN‐Based Laser Diodes
Author(s) -
Hansen M.,
Chen L.F.,
Speck J.S.,
DenBaars S.P.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<353::aid-pssb353>3.0.co;2-q
Subject(s) - materials science , laser , doping , diode , current density , magnesium , optoelectronics , analytical chemistry (journal) , optics , chemistry , metallurgy , physics , chromatography , quantum mechanics
Uniformly distributed precipitates have been observed by TEM in the p‐type layers of laser structures. The precipitate density decreases with decreasing flow of biscyclopentadienyl‐magnesium (Cp 2 Mg), which affects the hole concentrations in the p‐type layers. The higher hole concentration, with the reduced precipitate density, reduces the threshold current density and improves the internal quantum efficiency because of the higher number of holes available for radiative recombination. The threshold current density is also reduced 30% from 20.8 V for lasers with a high precipitate density compared to 14.3 V for lasers with a lower precipitate density.