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Influence of Dopants on Defect Formation in GaN
Author(s) -
LilientalWeber Z.,
Jasinski J.,
Benamara M.,
Grzegory I.,
Porowski S.,
Lampert D.J.H.,
Eiting C.J.,
Dupuis R.D.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<345::aid-pssb345>3.0.co;2-m
Subject(s) - metalorganic vapour phase epitaxy , dopant , materials science , transmission electron microscopy , chemical vapor deposition , polar , crystallography , crystal (programming language) , epitaxy , chemistry , doping , optoelectronics , nanotechnology , layer (electronics) , physics , astronomy , computer science , programming language
The influence of p‐dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal‐organic chemical‐vapor deposition (MOCVD) have been studied. A structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN : Mg on c ‐plane (formation of Mg‐rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite side of the crystal (growth in the Ga to N polar direction) Mg‐rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN : Be crystals.