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Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga‐Polarity GaN by Plasma‐Assisted Molecular Beam Epitaxy
Author(s) -
Shen X.Q.,
Ide T.,
Shimizu M.,
Sasaki F.,
Okumura H.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<99::aid-pssb99>3.0.co;2-2
Subject(s) - molecular beam epitaxy , materials science , photoluminescence , optoelectronics , heterojunction , quantum well , diffraction , wide bandgap semiconductor , electron diffraction , gallium nitride , epitaxy , optics , nanotechnology , laser , physics , layer (electronics)
InGaN/GaN multiple quantum‐wells (MQWs) on Ga‐polarity GaN by plasma‐assisted molecular‐beam epitaxy were grown and characterized. In‐situ reflection high‐energy‐electron diffraction observations and high‐resolution X‐ray diffraction results indicated that a flat interface and a good periodicity of the InGaN/GaN heterostructures were achieved. Photoluminescence measurements revealed the superior optical properties of InGaN/GaN MQWs emitting from ultraviolet (≈388 nm) to green‐yellow (≈528 nm) range with the In composition varying from 0.04 to 0.30. Stimulated‐emission features by optical pumping were demonstrated, which implied the high‐quality of the MBE‐grown InGaN/GaN MQWs.