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Piezoelectric Field‐Induced Quantum‐Confined Stark Effect in InGaN/GaN Multiple Quantum Wells
Author(s) -
Lai C.Y.,
Hsu T.M.,
Chang W.H.,
Tseng K.U.,
Lee C.M.,
Chuo C.C.,
Chyi J.I.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<77::aid-pssb77>3.0.co;2-i
Subject(s) - quantum confined stark effect , stark effect , blueshift , piezoelectricity , quantum well , field (mathematics) , condensed matter physics , spectral line , materials science , optoelectronics , physics , optics , photoluminescence , quantum mechanics , laser , mathematics , pure mathematics , composite material
In this paper, we present an experimental evidence for the piezoelectric field‐induced quantum‐confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In 0.23 Ga 0.77 N/GaN p–i–n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum‐well‐related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.