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Pressure Dependence of Piezoelectric Field in InGaN/GaN Quantum Wells
Author(s) -
Vaschenko G.,
Patel D.,
Mei C.S.,
Gardner N.F.,
Sun J.,
Götz W.,
Tomé C.N.,
Clausen B.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<73::aid-pssb73>3.0.co;2-5
Subject(s) - piezoelectricity , hydrostatic pressure , quantum well , materials science , condensed matter physics , field (mathematics) , strain (injury) , quantum confined stark effect , stark effect , atmospheric pressure , quantum , optoelectronics , gallium nitride , electric field , optics , physics , nanotechnology , composite material , thermodynamics , quantum mechanics , laser , layer (electronics) , medicine , mathematics , meteorology , pure mathematics
In this work we use the well width dependence of the quantum confined Stark effect to determine the variation of the built‐in piezoelectric field in InGaN/GaN quantum wells with applied hydrostatic pressure. We find that the field increases from 1.4 MV/cm at atmospheric pressure to 2.6 MV/cm at 8.7 GPa. An analysis of the strain generated by the pressure suggests that the increase in the field is due to a dramatic dependence of the piezoelectric constants of GaN and InGaN on strain.