Premium
Outgoing Multiphonon Resonant Raman Scattering in Be‐ and C‐Implanted GaN
Author(s) -
Sun W.H.,
Chua S.J.,
Wang L.S.,
Zhang X.H.,
Hao M.S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<341::aid-pssb341>3.0.co;2-2
Subject(s) - raman scattering , photoluminescence , phonon , annealing (glass) , materials science , raman spectroscopy , resonance (particle physics) , wide bandgap semiconductor , atmospheric temperature range , band gap , scattering , condensed matter physics , optoelectronics , atomic physics , optics , physics , composite material , meteorology
We have performed outgoing resonant Raman scattering and photoluminescence measurements on as‐grown, Be‐ and C‐implanted GaN in the temperature range of 77–330 K. In implanted GaN after postimplantation annealing at 1100 °C, LO multiphonons up to the seventh order were observed with the very strong 4LO and 5LO modes at ∼2955 and ∼ 3690 cm —1 , respectively, showing extraordinary resonance behavior. With increasing sample temperature, these two modes significantly decreased and increased in intensity, respectively. The phenomenon is attributed to the variation of resonant conditions due to the shift of the bandgap energy. Meanwhile, the combination of E 2 (high) and quasi‐LO phonons was strongly enhanced by quasi‐LO phonon involving and thus the corresponding overtones can be clearly observed even up to the sixth order ( m = 6).