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Annealing Behaviour of GaN after Implantation with Hafnium and Indium
Author(s) -
Lorenz K.,
Ruske F.,
Vianden R.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<331::aid-pssb331>3.0.co;2-6
Subject(s) - annealing (glass) , materials science , indium , quadrupole , lattice (music) , ion implantation , crystal structure , hafnium , analytical chemistry (journal) , condensed matter physics , molecular physics , crystallography , optoelectronics , chemistry , ion , atomic physics , metallurgy , physics , zirconium , organic chemistry , chromatography , acoustics
The annealing behaviour of GaN after implantation of 181 Hf and 111 In was studied using the perturbed angular correlation (PAC) technique. During annealing most Hf probes are built in on substitutional Ga sites and the level of lattice damage decreases with annealing temperature T A . In the case of In the results also show a good recovery of the crystal lattice. However a large variation of the quadrupole interaction frequency is observed indicating a considerable change in the local lattice geometry. The dependency of this variation on the implantation dose is investigated. The values derived for the electric field gradients at the probe sites are compared to values determined by NMR measurements.