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Comparative Study on the Optical Properties of Eu:GaN with Tb:GaN
Author(s) -
Bang H.,
Morishima S.,
Li Z.,
Akimoto K.,
Nomura M.,
Yagi E.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<319::aid-pssb319>3.0.co;2-j
Subject(s) - luminescence , fourier transform infrared spectroscopy , doping , materials science , rare earth , photoluminescence , infrared , fourier transform , intensity (physics) , spectroscopy , energy transfer , optoelectronics , analytical chemistry (journal) , chemistry , optics , molecular physics , physics , chromatography , metallurgy , quantum mechanics
Sharp luminescence originating from intra‐atomic 4f–4f transition from both Eu and Tb doped GaN was observed at 622 nm which can be assigned to 5 D 0 – 7 F 2 transition of Eu 3+ and at 545 nm which can be assigned to 5 D 4 – 7 F 5 transitions of Tb 3+ . However, the luminescence intensity of Eu 3+ is two orders of magnitude stronger than that of Tb 3+ though the content of the rare earth elements is almost the same. The cause of the difference in the luminescence properties was studied based on the defect‐related energy transfer model, and the role of the defects observed by Fourier transform infrared (FTIR) spectra was discussed.