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Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN
Author(s) -
Hierro A.,
Arehart A.R.,
Heying B.,
Hansen M.,
Speck J.S.,
Mishra U.K.,
DenBaars S.P.,
Ringel S.A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<309::aid-pssb309>3.0.co;2-n
Subject(s) - kinetics , molecular beam epitaxy , deep level transient spectroscopy , crystallographic defect , electron , materials science , penning trap , epitaxy , trap (plumbing) , spectroscopy , atomic physics , optoelectronics , molecular physics , chemistry , crystallography , physics , silicon , nanotechnology , layer (electronics) , quantum mechanics , meteorology
The carrier capture kinetics of the E c —0.59 eV and E c —0.91 eV electron traps found in molecular beam epitaxy (MBE)‐grown n‐GaN have been determined by means of deep level transient spectroscopy (DLTS). The 0.59 eV trap does not show the behaviour of either ideal point defects or line defects. In contrast, the 0.91 eV trap displays the kinetics of linearly arranged interacting point defects, which generate a time‐dependent local Coulombic potential with a characteristic time constant of ≈ 8.6 μs.