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Passivation and Doping due to Hydrogen in III‐Nitrides
Author(s) -
Limpijumg S.,
Van de Walle C.G.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<303::aid-pssb303>3.0.co;2-a
Subject(s) - fermi level , nitride , passivation , doping , hydrogen , conductivity , materials science , condensed matter physics , electronic structure , wide bandgap semiconductor , electrical resistivity and conductivity , chemistry , optoelectronics , nanotechnology , physics , electron , quantum mechanics , organic chemistry , layer (electronics)
We have systematically studied the electronic structure and stability of hydrogen in AlN, GaN, and InN, based on first‐principles calculations. In GaN and AlN, H is amphoteric and always compensates the prevailing conductivity: in GaN, H + is stable for Fermi levels below 2.2 eV, and in AlN, H + is stable for E F below 2.5 eV. In InN, we find that H + is stable for all Fermi level positions; i.e., H behaves exclusively as a donor. Consequences for controlling the conductivity of InN are discussed.