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Defect‐Related Donors, Acceptors, and Traps in GaN
Author(s) -
Look D.C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<293::aid-pssb293>3.0.co;2-f
Subject(s) - deep level transient spectroscopy , photoluminescence , acceptor , spectroscopy , materials science , atomic physics , electron , silicon , physics , condensed matter physics , optoelectronics , nuclear physics , quantum mechanics
Point defects have been created in GaN by various types of irradiation: electrons (1 and 2.5 MeV, and the spectrum from 90 Sr); protons (0.15 MeV, 2 MeV, and 24 GeV); He ions (5.4 MeV); γ‐rays ( 60 Co); and sputtering and e‐beam deposition of metals. They have been studied by temperature‐dependent Hall‐effect measurements (T‐Hall), deep‐level transient spectroscopy (DLTS), optically detected magnetic resonance (ODMR), positron annihilation spectroscopy (PAS), and photoluminescence (PL). Confirmed defect energies, and firm or tentative defect assignments, are as follows: T‐Hall (donor at 0.06 eV, V N ); DLTS (electron trap at 0.18 eV (thermal 0.06 eV), V N ; electron trap at 0.9 eV, N I or Ga I –X); ODMR (Ga I and Ga I –X); PAS (V Ga ); PL (0.85 eV band with 0.88 eV zero‐phonon line, O N or O N –Ga I ; 0.93 eV band; 3.37 eV line; 3.39 eV line). Many of these defect signatures have also been observed in as‐grown GaN. Dislocations, of the threading‐edge type, are found to be acceptor‐like in n‐type GaN.