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Raman Characterization of MBE Grown (Al)GaAsN
Author(s) -
Hashimoto A.,
Kitano T.,
Takahashi K.,
Kawanishi H.,
Patane A.,
Foxon C.T.,
Yamamoto A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<283::aid-pssb283>3.0.co;2-j
Subject(s) - raman spectroscopy , photoluminescence , luminescence , excited state , materials science , ground state , characterization (materials science) , lattice (music) , raman scattering , atomic physics , nanotechnology , optoelectronics , physics , optics , acoustics
Raman characterization of MBE grown (Al)GaAsN layers has been performed in order to investigate the structure of the lattice. Several new Al–N related Raman modes appear in the spectra. The Raman results clearly indicate that the nitrogen atoms in the film form mainly Al–N bonds instead of Ga–N bonds. An extremely strong, broad deep luminescence is observed in the low temperature photoluminescence spectrum, which is related to the nitrogen incorporation. The luminescence suggests that, because the electronic states are strongly coupled to the (Al)GaAsN lattice, localized electron transitions occur from the excited state to the ground state of the deep centres.