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Phonon Modes and Critical Points of GaPN
Author(s) -
Leibiger G.,
Gottschalch V.,
Schwabe R.,
Benndorf G.,
Schubert M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<279::aid-pssb279>3.0.co;2-#
Subject(s) - phonon , physics , condensed matter physics
Spectroscopic ellipsometry in the mid‐infrared and near‐infrared to vacuum‐ultra violet spectral range is employed to study the phonon properties and critical points of a GaP 0.977 N 0.023 layer grown on GaP. We observe a two‐mode phonon behaviour, i.e., a GaN‐like and a GaP‐like phonon. We detect six critical‐point structures, which we assign as E 0 dir , E 0 ′, E 1 , E 1 ′, E 2 1 and E 2 2 transitions. We observe a blueshift of the direct band gap E 0 dir and of the E 1 transition in contrast to the redshift of the photoluminescence peak and the absorption tail, which we observed on the same sample. The critical‐point energies E 0 ′, E 1 ′, and E 2 do not show any significant composition dependence.