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A Novel Two‐Step Method for Improvement of MOVPE Grown InN Film on GaP(111)B Substrate
Author(s) -
Bhuiyan A.G.,
Yamamoto A.,
Hashimoto A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<27::aid-pssb27>3.0.co;2-s
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , materials science , substrate (aquarium) , layer (electronics) , optoelectronics , buffer (optical fiber) , two step , nanotechnology , chemistry , computer science , telecommunications , biology , ecology , combinatorial chemistry
This paper reports a novel two‐step method for improvement of MOVPE grown InN film on GaP(111)B, which includes the growth of a low temperature InN buffer layer and a high temperature epilayer. The additional feature of this two‐step method which distinguishes it from the commonly known two‐step method is that after growing the low temperature InN buffer layer the temperature is raised to the epitaxial growth temperature while continuing the growth. It is found that a single crystalline InN film with an excellent surface morphology can be grown on GaP(111)B at high temperature (∼600 °C) by this novel two‐step method. In contrast, InN film grown by the conventional two‐step method is found to be very rough. Differences between these two growth techniques and their influences on the buffer layer and then on main epilayer are also discussed.