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The Influence of Arsenic Incorporation on the Optical Properties of As‐doped GaN Films Grown by Molecular Beam Epitaxy Using Arsenic Tetramers
Author(s) -
Novikov S.V.,
Li T.,
Winser A.J.,
Foxon C.T.,
Campion R.P.,
Staddon C.R.,
Davis C.S.,
Harrison I.,
Kovarsky A.P.,
Ber B.Ja.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<227::aid-pssb227>3.0.co;2-r
Subject(s) - arsenic , molecular beam epitaxy , doping , photoluminescence , analytical chemistry (journal) , materials science , epitaxy , blueshift , optoelectronics , chemistry , nanotechnology , environmental chemistry , metallurgy , layer (electronics)
We have studied the influence of the incorporation of As on the optical properties of As‐doped GaN layers grown by plasma‐assisted molecular beam epitaxy (PA‐MBE) using arsenic tetramers. The doping level of arsenic was determined by secondary ion mass spectrometry. The arsenic concentration is uniform throughout the layers. There is a sub‐linear dependence of the arsenic incorporation on the flux with a log–log slope of about 0.1. The photoluminescence from the As‐doped GaN films consists of UV excitonic emission at 3.4 eV, UV emission at 3.2 eV and a strong blue band centred at 2.6 eV. The intensity of the blue band centred at 2.6 eV increases more rapidly with arsenic flux than the concentration of arsenic in the bulk, and has a log–log slope of about 0.49. This suggests an approximately fourth‐power dependence of the intensity of the blue emission on the concentration of arsenic in the GaN films.