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Temperature Dependence of the Miscibility Gap on the GaN‐Rich Side of the Ga–N–As System
Author(s) -
Novikov S.V.,
Li T.,
Winser A.J.,
Campion R.P.,
Staddon C.R.,
Davis C.S.,
Harrison I.,
Foxon C.T.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<223::aid-pssb223>3.0.co;2-6
Subject(s) - materials science , hexagonal crystal system , spinodal decomposition , doping , phase (matter) , arsenic , emission intensity , hexagonal phase , crystallography , chemistry , optoelectronics , metallurgy , organic chemistry
We have investigated the temperature dependence of the transition from single phase films of GaN 1— x As x to phase separated layers, which show regions of hexagonal [0001] oriented GaN, cubic [111] oriented GaAs and hexagonal [0001] oriented GaN 1— x As x . We see a strong temperature dependence of the arsenic flux at which GaAs inclusions are first observed. Finally the intensity of blue emission observed in As‐doped GaN samples decreases strongly with decreasing growth temperature.