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The Transition from Blue Emission in As‐Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy
Author(s) -
Foxon C.T.,
Novikov S.V.,
Liao Y.,
Winser A.J.,
Harrison I.,
Li T.,
Campion R.P.,
Staddon C.R.,
Davis C.S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<203::aid-pssb203>3.0.co;2-e
Subject(s) - molecular beam epitaxy , materials science , doping , emission intensity , epitaxy , optoelectronics , alloy , transition metal , chemistry , nanotechnology , metallurgy , catalysis , layer (electronics) , biochemistry
The transition from As‐doped GaN showing strong blue emission (∼2.6 eV) at room temperature to the formation of GaN 1— x As x alloys for films grown by molecular beam epitaxy was investigated. This study demonstrates that with increasing N to Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN 1— x As x alloy films. Several possible models, which can explain how this might occur are presented.