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Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots
Author(s) -
Brown J.,
Elsass C.,
Poblenz C.,
Petroff P.M.,
Speck I.S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co;2-w
Subject(s) - quantum dot , photoluminescence , molecular beam epitaxy , gallium nitride , gallium , materials science , optoelectronics , nitride , epitaxy , nanotechnology , layer (electronics) , metallurgy
We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma‐assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 ± 5) nm and heights of (3 ± 1) nm. PL from the quantum dots was compared to that of a gallium nitride growth template film to unambiguously demonstrate the contribution of the QDs to the spectra. Integrated PL intensity was observed to remain strong well above 300 K, and we attribute the decrease in the quantum dot PL at higher temperatures to phonon‐mediated carrier ionization of deep level.