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Cathodoluminescence Investigations of Interfaces in InGaN/GaN/Sapphire Structures
Author(s) -
Godlewski M.,
Goldys E.M.,
Butcher K.S.A.,
Phillips M.R.,
Pakula K.,
Baranowski J.M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<179::aid-pssb179>3.0.co;2-3
Subject(s) - cathodoluminescence , sapphire , materials science , metalorganic vapour phase epitaxy , optoelectronics , quantum well , wide bandgap semiconductor , gallium nitride , buffer (optical fiber) , luminescence , epitaxy , optics , laser , nanotechnology , layer (electronics) , physics , telecommunications , computer science
Scanning electron microscopy and cathodoluminescence (CL) in spot and depth‐profiling modes were used to evaluate the in‐plane and in‐depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low‐temperature (LT) GaN buffer. Depth‐profiling CL investigations were used to identify the observed CL emissions, which show a complicated in‐depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.