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Study of Epitaxial Relationship in InN Growth on Sapphire (0001) by RF‐MBE
Author(s) -
Yamaguchi T.,
Saito Y.,
Kano K.,
Araki T.,
Teraguchi N.,
Suzuki A.,
Nanishi Y.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<17::aid-pssb17>3.0.co;2-u
Subject(s) - sapphire , epitaxy , materials science , optoelectronics , crystallography , condensed matter physics , chemistry , optics , nanotechnology , layer (electronics) , physics , laser
InN films were grown directly on sapphire (0001) substrates by rf‐MBE. In the direct growth of InN on sapphire substrates without nitridation process, InN films have the tendency to form a multi‐domain structure due to in‐plane rotation and they can have both the epitaxial relationship of [11 $\bar 2$ 0] InN ∥ [11 $\bar 2$ 0] sapphire and [10 $\bar 1$ 0] InN ∥ [11 $\bar 2$ 0] sapphire . The domain with [11 $\bar 2$ 0] InN ∥ [11 $\bar 2$ 0] sapphire is mainly observed at relatively low growth temperatures around 520 °C. The domain with [10 $\bar 1$ 0] InN ∥ [11 $\bar 2$ 0] sapphire , however, becomes dominant with increasing the growth temperatures to around 540 °C. The dominant factor in determining the main epitaxial relationship is found to be its growth temperature. However, this is highly sensitive to a small change in growth temperature which should be controlled within 20 °C.