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Phase Separation in InGaN Epitaxial Layers
Author(s) -
Westmeyer A.N.,
Mahajan S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<161::aid-pssb161>3.0.co;2-2
Subject(s) - epitaxy , materials science , sapphire , diffraction , wavelength , chemical vapor deposition , transmission electron microscopy , phase (matter) , metalorganic vapour phase epitaxy , reflection (computer programming) , electron diffraction , layer (electronics) , substrate (aquarium) , optoelectronics , deposition (geology) , optics , chemistry , nanotechnology , physics , laser , geology , paleontology , organic chemistry , oceanography , sediment , computer science , programming language
Epitaxial layers of InGaN were deposited by metalorganic chemical vapor deposition on a GaN layer/sapphire substrate in order to ascertain compositional variation in the GaN–InN system. Samples were examined with In contents from x = 0.09 to 0.31. Plan‐view images obtained by transmission electron microscopy reveal a domain structure within which the composition is modulated. Satellites appear around the fundamental reflections in the diffraction pattern. The spacing between the satellite and the reflection can be related to the wavelength of the modulations. Equations are derived for modulations in the [10 $\bar 1$ 0] and [11 $\bar 2$ 0] directions. Modulations were measured in the [10 $\bar 1$ 0] direction and found to be about λ = 3.2 nm for all samples. Strain energy considerations explain the observation of modulations along different directions.