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Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures
Author(s) -
Kaneta A.,
Marutsuki G.,
Okamoto K.,
Kawakami Y.,
Nakagawa Y.,
Shinomiya G.,
Mukai T.,
Fujita Sg.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<153::aid-pssb153>3.0.co;2-z
Subject(s) - photoluminescence , near field scanning optical microscope , materials science , quantum well , optics , microscopy , spectral line , optical microscope , intensity (physics) , optoelectronics , fluorescence , physics , scanning electron microscope , laser , astronomy
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near‐field optical microscopy (SNOM) under illumination‐collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The near‐field PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.