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Polarity of High‐Quality Indium Nitride Grown by RF Molecular Beam Epitaxy
Author(s) -
Saito Y.,
Tanabe Y.,
Yamaguchi T.,
Teraguchi N.,
Suzuki A.,
Araki T.,
Nanishi Y.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<13::aid-pssb13>3.0.co;2-h
Subject(s) - indium nitride , indium , molecular beam epitaxy , materials science , polarity (international relations) , sapphire , nitride , epitaxy , optoelectronics , analytical chemistry (journal) , chemistry , layer (electronics) , optics , laser , nanotechnology , biochemistry , physics , chromatography , cell
We have evaluated the polarity of single‐crystalline InN using coaxial impact collision ion scattering spectroscopy (CAICISS). The polarity of rf‐MBE grown InN on sapphire was found to depend on growth temperature. Nitrogen polarity was observed for low temperature grown InN at 300 °C. On the other hand, high temperature grown InN at 550 °C showed primarily indium polarity. Furthermore, a mixture of indium polarity and nitrogen polarity was observed for two‐step grown InN. A GaN cap layer was grown on InN to infer the polarity of InN. From reflection high‐energy electron diffraction observations, GaN grown on low temperature grown InN showed a (3 × 3) reconstruction pattern, whereas GaN grown on high temperature grown InN showed a (2 × 2) reconstruction pattern. These results suggest that the polarity of InN is much more sensitive to growth temperature compared with other nitride semiconductors.