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Photoluminescence Excitation Spectroscopy of MBE Grown InGaN Quantum Wells and Quantum Boxes
Author(s) -
White M.E.,
O'Donnell K.P.,
Martin R.W.,
Deatcher C.J.,
Damilano B.,
Grandjean N.,
Massies J.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<129::aid-pssb129>3.0.co;2-n
Subject(s) - photoluminescence , photoluminescence excitation , quantum well , spectroscopy , materials science , band gap , excitation , absorption (acoustics) , stokes shift , absorption spectroscopy , quantum dot , optoelectronics , analytical chemistry (journal) , chemistry , optics , physics , luminescence , laser , chromatography , quantum mechanics , composite material
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski‐Krastanov type quantum box samples were chosen that emit from blue to red. The bandgap energy ( E g ), determined from the PLE spectrum, was found to decrease concurrently with the detection energy. This indicates that the emission spectrum from the sample is inhomogeneously broadened. A plot of the resultant Stokes shift against detection energy shows a linear trend. Our results agree with those from independent measurements of thermally detected optical absorption (TDOA) in some of the samples. On comparison with absorption and PLE measurements on MOCVD grown InGaN, a difference in the bandgap energies obtained becomes apparent for detection energies below ≈2.6 eV.