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Spectroscopy and Modeling of Carrier Recombination in III–N Heterostructures
Author(s) -
Sweeney P.M.,
Cheung M.C.,
Chen F.,
Cartwright A.N.,
Bour D.P.,
Kneissl M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<115::aid-pssb115>3.0.co;2-6
Subject(s) - spectroscopy , recombination , heterojunction , materials science , optoelectronics , chemical physics , engineering physics , chemistry , physics , quantum mechanics , biochemistry , gene
Time‐resolved temperature dependent PL measurements of InGaN quantum wells are presented. The effects of quantum well‐like and localized state emission in similar p–i(MQW)–n structures are discussed. A phenomenological model is presented to explain the observed dynamics.