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Phonon and Photon Emission from Optically Excited InGaN/GaN Multiple Quantum Wells
Author(s) -
Akimov A.V.,
Cavill S.A.,
Kent A.J.,
Stanton N.M.,
Wang T.,
Sakai S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:1<107::aid-pssb107>3.0.co;2-2
Subject(s) - phonon , photoluminescence , spontaneous emission , emission intensity , quantum well , excited state , relaxation (psychology) , photon , materials science , radiative transfer , optoelectronics , wide bandgap semiconductor , non radiative recombination , condensed matter physics , physics , atomic physics , semiconductor , optics , semiconductor materials , laser , psychology , social psychology
The effect of the well width on both the photoluminescence (PL) and phonon emission in InGaN multiple quantum well (MQW) samples has been investigated. For narrow MQW samples ( w = 1.25, 2.5 nm) the low temperature PL quantum efficiency is close to unity with the phonon emission being due mainly to carrier relaxation in the QWs. For wider MQWs the PL quantum efficiency is reduced and the intensity of the phonon emission increases. We explain this in terms of non‐radiative recombination processes in the QWs which result in phonon emission.