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Some Transport Coefficients in Heavily Doped n‐Type Silicon
Author(s) -
Elfagd Y.,
Workalemahu B.,
Sharma S.K.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200110)227:2<549::aid-pssb549>3.0.co;2-0
Subject(s) - condensed matter physics , hall effect , doping , silicon , thermal conduction , magnetoresistance , conduction band , materials science , transverse plane , physics , statistical physics , mathematics , electrical resistivity and conductivity , thermodynamics , electron , quantum mechanics , magnetic field , optoelectronics , structural engineering , engineering
In this paper we have derived explicit expressions for some of the important galvanomagnetic transport coefficients, viz, the drift mobility, the Hall coefficient, and the coefficient of transverse magnetoresistance in heavily doped n‐type silicon taking into account the effect of band tails. These expressions are then used to calculate the transport coefficients for various donor concentrations from 1 × 10 18 to 2 × 10 20 cm —3 at 300 K. Our calculations show that taking into account the effect of conduction band tails results in lowering the values of the transport coefficients by as much as 30–50% than those obtained by neglecting the effect of band tails.