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Urbach‐Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS 2
Author(s) -
Abay B.,
Güder H.S.,
Efeoğlu H.,
Yoğurtçu Y.K.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200110)227:2<469::aid-pssb469>3.0.co;2-x
Subject(s) - absorption edge , semiconductor , ternary operation , attenuation coefficient , absorption (acoustics) , materials science , photon energy , spectral line , range (aeronautics) , atmospheric temperature range , condensed matter physics , absorption spectroscopy , analytical chemistry (journal) , thermal , photon , chemistry , band gap , optics , physics , thermodynamics , optoelectronics , chromatography , astronomy , computer science , composite material , programming language
The dependence of the absorption coefficient on the photon energy and sample temperature near the fundamental absorption edge (AE) was investigated for TlGaS 2 layered semiconductor crystals. The exponential absorption tails observed in the 10–340 K temperature range were interpreted as Urbach‐Martienssen (U‐M) tails. From the analysis of these tails, characteristic Urbach parameters were determined. The results lead to the conclusion that the temperature dependence of the absorption tails near the fundamental AE of TlGaS 2 is the result of thermal disorder.