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Spin‐Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn
Author(s) -
Sapega V.F.,
Ruf T.,
Cardona M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200108)226:2<339::aid-pssb339>3.0.co;2-8
Subject(s) - raman spectroscopy , acceptor , spin flip , condensed matter physics , electron , raman scattering , antiferromagnetism , exchange interaction , exciton , valence (chemistry) , ion , chemistry , core electron , spin (aerodynamics) , materials science , scattering , physics , organic chemistry , quantum mechanics , ferromagnetism , optics , thermodynamics
We report a detailed study of the exchange interactions in the neutral Mn acceptor, A 0 , and excitons bound to Mn acceptors, A 0 X, in bulk GaAs. By means of spin‐flip Raman scattering we measured the constant of antiferromagnetic exchange interaction between valence band holes and electrons in the inner Mn shell, deformational fields near Mn ions, g ‐factors of electrons in the inner Mn shell, and the g ‐factor of the A 0 center. Our results show that Mn acting as deep acceptor in GaAs strongly modifies spin interactions in the A 0 X complex. The strong coupling of the Mn 3d 5 core states with holes and electrons reveals itself in multi‐spin‐flip Raman processes and leads to the renormalization of the conduction band electron g ‐factor.