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Dynamical Image Forces near Semiconductor–Vacuum Interfaces and in Vacuum Interlayers between Semiconductors
Author(s) -
Gabovich A.M.,
Rozenbaum V.M.,
Voitenko A.I.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200107)226:1<133::aid-pssb133>3.0.co;2-5
Subject(s) - semiconductor , semiclassical physics , perpendicular , physics , perturbation (astronomy) , dielectric , quantum , polarization (electrochemistry) , condensed matter physics , classical mechanics , quantum mechanics , chemistry , geometry , mathematics
Dynamical image force (polarization) energies W ( z ) induced by charged particles moving perpendicular to the vacuum–semiconductor interface or in the vacuum slab between semiconductors have been calculated on the basis of the perturbation theory developed by the authors earlier. The cases of the uniform and uniformly accelerated motions are treated as an example. The adopted dielectric approach takes into account both spatial and temporal dispersions of the electrode dielectric functions ε ( k , ω ). It is shown that the quantum‐mechanical character of the k ‐dependence of ε ( k , ω ) leads to a smoother W ( z ) dependence than in the semiclassical case. It is also demonstrated that the proper account of the quantum‐mechanical screening behavior leads to a drastic reduction of the dynamical corrections to the static image forces. For reasonable values of the relevant parameters of the problem it is sufficient to retain only the first dynamical term of the perturbation series. Thus, the use of the expansion method is justified for multilayer semiconductor structures.