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Binding Energy of Hydrogen‐Like Impurities in a Thin Semiconductor Wire with Complicated Dispersion Law in a Magnetic Field
Author(s) -
Avetisyan A.A.,
Djotyan A.P.,
Kazaryan E.M.,
Poghosyan B.G.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200106)225:2<423::aid-pssb423>3.0.co;2-z
Subject(s) - condensed matter physics , radius , magnetic field , dispersion (optics) , semiconductor , binding energy , impurity , magnetic energy , hydrogen , chemistry , law , physics , atomic physics , magnetization , quantum mechanics , computer security , computer science , political science
The binding energy of a hydrogen‐like impurity in a quantum well wire (QWW) of A 3 B 5 ‐type semiconductors with Kane's dispersion law in a magnetic field B parallel to the wire axis has been calculated as a function of the radius of the wire and magnitude of B , using a variational approach. It is shown that the nonparabolicity of the dispersion law leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid nonlinear growth of binding energy with B .