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Intersubband Photocurrent Spectroscopy on Self‐Assembled In(Ga)As/GaAs Quantum Dots
Author(s) -
Chu L.,
Zrenner A.,
Bichler M.,
Böhm G.,
Abstreiter G.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:2<591::aid-pssb591>3.0.co;2-f
Subject(s) - photocurrent , quantum dot , wetting layer , excited state , photoluminescence , spectroscopy , materials science , polarization (electrochemistry) , optoelectronics , gallium arsenide , molecular physics , condensed matter physics , physics , chemistry , atomic physics , quantum mechanics
We report on vertical and lateral intersubband photocurrent (PC) spectroscopy on self‐assembled In(Ga)As/GaAs quantum dots (QDs). Transitions from bound states in QDs to the GaAs continuum have been observed in vertical PC measurements. These transitions are nearly independent of polarization of the incident light. Transition from QD bound state to the wetting layer subband has been observed in lateral PC spectra. A fine structure of the first excited state in QD can be resolved with in‐plane polarization dependent measurements. We present a consistent energy band diagram of self‐assembled In(Ga)As/GaAs QDs by comparing photoluminescence and infrared photocurrent data.