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Phase Diagram of a Quantum Dot with Steep Walls in Strong Magnetic Fields
Author(s) -
Fuhrer A.,
Lüscher S.,
Heinzel T.,
Ensslin K.,
Wegscheider W.,
Bichler M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:2<555::aid-pssb555>3.0.co;2-f
Subject(s) - condensed matter physics , coulomb blockade , quantum dot , phase diagram , physics , coulomb , magnetic field , spin (aerodynamics) , coupling (piping) , phase (matter) , voltage , quantum mechanics , materials science , electron , transistor , metallurgy , thermodynamics
We have studied the transport properties of a semiconductor quantum dot with steep walls in the Coulomb blockade regime and under strong magnetic fields with a filling factor ν between 2 and 4 inside the dot. A striking periodic suppression of Coulomb blockade resonances as a function of gate voltage is found, which reflects the selective coupling of dot states that belong to different Landau levels. The suppressed peaks are recovered under sufficiently high source–drain bias voltages and give rise to a novel type of structure superimposed on the Coulomb diamonds. The measurements are discussed in terms of both the charge density model, and the Fock‐Darwin model. We argue that in order to explain the data, a non‐parabolic confinement has to be assumed. We also find an alternating structure in the phase diagram and interpret this in terms of a spin effect.