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Time‐Resolved Amplified Spontaneous Emission in InAs/GaAs Quantum Dots
Author(s) -
Lingk C.,
von Plessen G.,
Feldmann J.,
Stock K.,
Arzberger M.,
Böhm G.,
Amann M.C.,
Abstreiter G.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:2<475::aid-pssb475>3.0.co;2-b
Subject(s) - amplified spontaneous emission , spontaneous emission , excited state , photon upconversion , quantum dot , laser , stimulated emission , materials science , superradiance , optoelectronics , electron , enhanced data rates for gsm evolution , atomic physics , physics , optics , quantum mechanics , telecommunications , computer science
In this paper, we investigate the dynamics of amplified spontaneous emission (ASE) in self‐assembled InAs/GaAs quantum dots. Upconversion is used to time‐resolve the emission from an edge‐emitting waveguide structure at room temperature which is excited by short laser pulses in a stripe geometry. We demonstrate that increases in both the electron–hole pair density and the stripe length significantly decrease the emission decay time from around 2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A simulation of the ASE process in this geometry is in agreement with our experimental results.