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Coherent Control of Stress‐Induced InGaAs Quantum Dots by Means of Phonon‐Assisted Resonant Photoluminescence
Author(s) -
Baranov A.V.,
Davydov V.,
Fedorov A.V.,
Ren H.W.,
Sugou S.,
Masumoto Y.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:2<461::aid-pssb461>3.0.co;2-v
Subject(s) - dephasing , photoluminescence , phonon , quantum dot , raman spectroscopy , coherent control , stress (linguistics) , spectral line , condensed matter physics , optoelectronics , materials science , quantum , physics , quantum mechanics , linguistics , philosophy
We report the control of coherent status of the lowest energy electronic state of InGaAs/GaAs stress‐induced quantum dots in an inhomogeneously broadened system by time‐integrated detection of narrow Raman‐like lines in resonant photoluminescence spectra. The dephasing time of 18.5 ps has been found at 2K.