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Spectral Hole‐Burning and Carrier‐Heating Dynamics in Quantum‐Dot Amplifiers: Comparison with Bulk Amplifiers
Author(s) -
Borri P.,
Langbein W.,
Hvam J.M.,
Heinrichsdorff F.,
Mao M.H.,
Bimberg D.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:2<419::aid-pssb419>3.0.co;2-j
Subject(s) - spectral hole burning , amplifier , femtosecond , ultrashort pulse , materials science , quantum dot , optoelectronics , optical amplifier , optics , physics , laser , cmos
The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum‐dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain compression is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum‐dot device is found, which is a promising prerequisite for high‐speed applications.