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Excited States of InAs/GaAs Quantum Dots
Author(s) -
Heitz R.,
Guffarth F.,
Mukhametzhanov I.,
Stier O.,
Madhukar A.,
Bimberg D.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:2<367::aid-pssb367>3.0.co;2-b
Subject(s) - exciton , excited state , quantum dot , biexciton , spectroscopy , condensed matter physics , phonon , coupling (piping) , renormalization , ground state , physics , atomic physics , materials science , optoelectronics , quantum mechanics , metallurgy
Exciton properties of self‐organized InAs/GaAs QDs are investigated. Size‐selective spectroscopy reveals the excited single‐exciton transition spectrum and enhanced polar exciton–LO‐phonon coupling. A good qualitative understanding of the experimental results is achieved by eight‐band k · p calculations. Renormalization of the single‐exciton spectrum in highly populated QDs shows the importance of many‐particle interactions in the strong confinement limit. The ground state transition energy decreases by ∼16 meV for QDs occupied with ∼18 excitons.