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Capacitance–Voltage Spectroscopy of Self‐Organized InAs/GaAs Quantum Dots Embedded in a pn Diode
Author(s) -
Wetzler R.,
Kapteyn C.M.A.,
Heitz R.,
Wacker A.,
Schöll E.,
Bimberg D.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<79::aid-pssb79>3.0.co;2-b
Subject(s) - quantum dot , capacitance , diode , materials science , optoelectronics , poisson's equation , spectroscopy , voltage , physics , quantum mechanics , electrode
We investigate the energy levels and their inhomogeneous broadening of self‐organized quantum dots (QDs) embedded in a pn diode by means of capacitance–voltage ( C – V ) profiling. Our simulations of the C – V characteristics are based on the self‐consistent solution of the Poisson equation and the drift–diffusion equations. Good quantitative agreement between predictions of the model and the low‐frequency C – V characteristics is obtained for different temperatures. The comparison with experimental C – V data allows us to determine the energy levels of single QD states and their broadening.