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Fluorescence Intermittency in InP Self‐Assembled Quantum Dots
Author(s) -
Sugisaki M.,
Ren HongWen,
Osad'ko I.S.,
Nishi K.,
Masumoto Y.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<67::aid-pssb67>3.0.co;2-p
Subject(s) - quantum dot , intermittency , photoluminescence , exciton , fluorescence , electric field , materials science , spectroscopy , optoelectronics , field (mathematics) , condensed matter physics , molecular physics , physics , optics , quantum mechanics , pure mathematics , thermodynamics , turbulence , mathematics
We report the fluorescence intermittency in self‐assembled InP quantum dots studied by means of far field single dot spectroscopy. We found that the blinking efficiently occurs when the confined excitons are filled up to a certain level. Since blinking dots are observed in the vicinity of scratches, we attributed the origin of the fluorescence intermittency to a local electric field due to a carrier trapped at a deep localized center near the interface between the dot and matrix. The validity of this model is supported by a thermal activation type behavior of the switching rate and the micro‐photoluminescence study in an external electric field.