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Near‐Field Optical Spectroscopy of Multiple Stacked Planes of GaN/AlN Quantum Dots
Author(s) -
Gucciardi P.G.,
Vinattieri A.,
Colocci M.,
Damilano B.,
Grandjean N.,
Semond F.,
Massies J.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<53::aid-pssb53>3.0.co;2-e
Subject(s) - quantum dot , molecular beam epitaxy , materials science , near field scanning optical microscope , photoluminescence , luminescence , optical microscope , spectroscopy , optoelectronics , substrate (aquarium) , microscopy , quantum well , gallium nitride , epitaxy , optics , nanotechnology , scanning electron microscope , laser , physics , layer (electronics) , oceanography , quantum mechanics , geology , composite material
We have investigated the photoluminescence properties of GaN quantum dots with sub‐micron lateral resolution by means of Near‐Field Scanning Optical Microscopy (SNOM) operating in illumination mode. The analyzed sample consists of several stacked planes of GaN/AlN quantum dots grown by molecular beam epitaxy on Si(111) substrate. A clear correlation between the surface topography measured by Atomic Force Microscopy on uncapped samples and the SNOM luminescence maps has been found.