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Photoluminescence from Si Nanocrystals Embedded in SiO 2 Matrices in a Weak Confinement Regime
Author(s) -
Takeoka S.,
Fujii M.,
Hayashi S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<229::aid-pssb229>3.0.co;2-o
Subject(s) - photoluminescence , nanocrystal , exciton , materials science , blueshift , band gap , quantum dot , condensed matter physics , red shift , optoelectronics , nanotechnology , physics , quantum mechanics , galaxy
We have studied photoluminescence (PL) from surface‐oxidized Si nanocrystals (nc‐Si) as a function of the size (4.2–9.0 nm in diameter). As the size decreased, a high‐energy shift of the PL peak from the vicinity of the bulk band gap to the visible region was observed for the first time. This PL shift was accompanied by the shortening of the PL lifetime and the increase in the exchange splitting energy of excitons.