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Structural and Chemical Investigation of InAs/GaAs Nanostructures by Transmission Electron Microscopy
Author(s) -
Rosenauer A.,
van Dyck D.,
Gerthsen D.,
Arzberger M.,
Böhm G.,
Abstreiter G.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<213::aid-pssb213>3.0.co;2-f
Subject(s) - transmission electron microscopy , molecular beam epitaxy , materials science , characterization (materials science) , reflection (computer programming) , nanostructure , microscopy , electron microscope , wetting layer , epitaxy , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , optics , quantum dot , chemistry , layer (electronics) , physics , chromatography , computer science , programming language
We report on the transmission electron microscopy characterization of InAs Stranski‐Krastanov layers grown on GaAs (001) by molecular beam epitaxy at growth temperatures of 480 and 530 °C. Chemically sensitive reflections are used for the evaluation of the composition. The different influence of strain effects on the imaging with either the (002) or the (020) reflection is discussed. The considerations show that the (002) reflection can be used for an accurate measurement of the In concentration. The evaluation of concentration profiles of the wetting layers reveal a segregation probability of R = 0.77 ± 0.02 for T G = 480 °C and R = 0.82 ± 0.02 for T G = 530 °C.