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Advantages of Using CdS as Cd‐Source for Growth of CdSe Quantum Islands and Wells
Author(s) -
Kurtz E.,
Schmidt M.,
Baldauf M.,
Litvinov D.,
Gerthsen D.,
Kalt H.,
Klingshirn C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<185::aid-pssb185>3.0.co;2-k
Subject(s) - laser linewidth , photoluminescence , homogeneity (statistics) , molecular beam epitaxy , materials science , epitaxy , transmission electron microscopy , sulfur , quantum well , optoelectronics , fabrication , chemistry , nanotechnology , analytical chemistry (journal) , optics , laser , metallurgy , physics , medicine , statistics , mathematics , alternative medicine , layer (electronics) , pathology , chromatography
In this study we report on the fabrication and investigation of high quality CdSe‐based quantum structures embedded in ZnSe. The structures were grown by molecular beam epitaxy using a novel growth technique in which the commonly used Cd‐elemental source is substituted by a CdS compound source. An exchange reaction between the sulfur and elemental Se leads to the growth of CdSe with a minor sulfur contamination of the order of 1% depending on the growth conditions. Quantum structures grown with the compound show a better homogeneity and narrower photoluminescence linewidth than conventionally grown structures even though high resolution transmission electron microscopy indicates that intermixing of CdSe and ZnSe still occurs. The properties and implications of the structures grown by the new method will be discussed.