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Interface Phonons in CdSe/ZnSe Self‐Assembled Quantum Dot Structures
Author(s) -
Rho H.,
Smith L.M.,
Jackson H.E.,
Lee S.,
Dobrowolska M.,
Furdyna J.K.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<165::aid-pssb165>3.0.co;2-s
Subject(s) - quantum dot , phonon , raman scattering , exciton , condensed matter physics , raman spectroscopy , excited state , materials science , scattering , relaxation (psychology) , molecular physics , excitation , optoelectronics , chemistry , physics , atomic physics , optics , psychology , social psychology , quantum mechanics
We use micro‐Raman scattering to study the interface (IF) optical phonon in a CdSe self‐assembled quantum dot structure. Spatially resolved micro‐Raman scattering data obtained from a cleaved edge of a sample shows that the IF phonon is localized at the CdSe dot layer. The intensity of the Raman scattering from the IF phonon strongly increases as the CdSe dots are excited resonantly, suggesting strong coupling of the IF phonon to excitons localized in the CdSe dots. Intensity changes of the IF phonon as a function of excitation energy reflect an energy level distribution within the ensemble of CdSe dots. We suggest that the IF phonon plays a role in the phonon‐related carrier relaxation process in the CdSe self‐assembled quantum dot structures.